Laura Ruppalt, Ph.D.

Education

J.D., Antonin Scalia Law School at George Mason University, 2021 (expected)
Ph.D., University of Illinois at Urbana-Champaign, 2007
B.S.E., Princeton University, 2002

Bar Admissions

None

Memberships

  • Institute of Electrical and Electronics Engineers, senior member

  • American Physical Society, past member

  • Materials Research Society, past member

Laura B. Ruppalt is a Research Fellow with Boyden Gray & Associates. She is currently a student at the Antonin Scalia Law School at George Mason University, where she serves as Articles Editor for the George Mason Law Review.

She received her doctorate in electrical and computer engineering from the University of Illinois at Urbana-Champaign, where she researched carbon nanotube-semiconductor systems. Funded through National Science Foundation and National Defense Science and Engineering Graduate fellowships, she received the Gregory Stillman and Paul D. Coleman awards for outstanding graduate research.

Before joining Boyden Gray & Associates, Dr. Ruppalt spent over a decade conducting scientific and engineering research for national defense applications in fields spanning nanotechnology to shipboard radar. She is the author or co-author of more than 30 scientific publications.

Dr. Ruppalt graduated summa cum laude from Princeton University with a B.S.E. in electrical engineering, where she was a member of the Tau Beta Pi engineering honor society and received the President’s Award and Peter Mark Prize for academic excellence.

Contact: ruppalt@boydengrayassociates.com; 202-955-0614.

Selected Publications

A.C. Kozen, Z.R. Robinson, E. Glaser, M. Twigg, T.J. Larrabee, H. Cho, S.M. Prokes, and L.B. Ruppalt, “In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications,” ACS Applied Materials and Interfaces, 12, 16639 (2020).

J. Warzoha, B.F. Donovan, N.T. Vu, J.G. Champlain, S. Mack, and L.B. Ruppalt, “Nanoscale thermal transport in amorphous and crystalline GeTe thin films,” Applied Physics Letters, 115, 023104 (2019).

Podpirka, W.K. Lee, J.I. Ziegler, T.H. Brintlinger, J.R. Felts, B.S. Simpkins, N.D. Bassim, A.R. Laracuente, P.E. Sheehan, and L.B. Ruppalt, “Nanopatterning of GeTe Phase Change Films via Heated-Probe Lithography,” Nanoscale, 9, 8815 (2017).

M. Oliver, J.A. Fairfield, A.T. Bellew, S. Lee, J.G. Champlain, L.B. Ruppalt, J.J. Boland, and P.M. Vora, “Quantum point contacts and resistive switching in Ni/NiO nanowire junctions,” Applied Physics Letters 109, 203101 (2016).

G. Champlain, L.B. Ruppalt, A.C. Guyette, N. El-Hinnawy, P. Borodulin, E. Jones, R.M. Young, and D. Nichols, “Examination of the temperature dependent electronic behavior of GeTe for switching applications,” Journal of Applied Physics, 119, 244501 (2016).

L.B. Ruppalt, E.R. Cleveland, J.G. Champlain, D. Park, S.M. Prokes, J.B. Boos, and B.R. Bennett, “Atomic Layer Deposition of Al2O3 on GaSb using In-Situ Hydrogen Plasma Exposure,” Applied Physics Letters, 101, 231601 (2012).

L.B. Ruppalt, D.R. McKinstry, K.C. Lauritzen, A.K. Wu, S.A. Phillips, and S.H. Talisa, “Simultaneous Digital Measurement of Phase and Amplitude Noise,” Proceedings of the 2010 IEEE International Frequency Control Symposium, 1-4 June 2010, pp. 97-102.

L.B. Ruppalt and J.W. Lyding, “Charge transfer between semiconducting carbon nanotubes and their doped GaAs(110) and InAs(110) substrates detected by scanning tunneling spectroscopy,” Nanotechnology, 18, 215202 (2007).

L.B. Ruppalt and J.W. Lyding, “Metal-induced gap states at a carbon nanotube intramolecular heterojunction observed by scanning tunneling microscopy,” Small, 3, 280-284 (2007).